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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BC635; BC637; BC639 NPN medium power transistors
Product specification Supersedes data of 1997 Mar 12 1999 Apr 23
Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES * High current (max. 1 A) * Low voltage (max. 80 V). APPLICATIONS * Driver stages of audio/video amplifiers. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC636, BC638 and BC640. PINNING PIN 1 2 3
BC635; BC637; BC639
DESCRIPTION base collector emitter
1 handbook, halfpage
2 3
2 1 3
MAM259
Fig.1
Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BC635 BC637 BC639 VCEO collector-emitter voltage BC635 BC637 BC639 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C open collector open base - - - - - - - - -65 - -65 45 60 80 5 1 1.5 200 0.83 +150 150 +150 V V V V A A mA W C C C PARAMETER collector-base voltage CONDITIONS open emitter - - - 45 60 100 V V V MIN. MAX. UNIT
1999 Apr 23
2
Philips Semiconductors
Product specification
NPN medium power transistors
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain CONDITIONS IE = 0; VCB = 30 V PARAMETER thermal resistance from junction to ambient
BC635; BC637; BC639
CONDITIONS note 1
VALUE 150
UNIT K/W
MIN. - - - 40 63 25 63 100
MAX. 100 10 100 - 250 - 160 250 500 1 - 1.6
UNIT nA A nA
IE = 0; VCB = 30 V; Tj = 150 C IC = 0; VEB = 5 V VCE = 2 V; see Fig.2 IC = 5 mA IC = 150 mA IC = 500 mA DC current gain BC639-10 BC635-16; BC637-16; BC639-16 VCEsat VBE fT h FE1 ----------h FE2 collector-emitter saturation voltage base-emitter voltage transition frequency DC current gain ratio of the complementary pairs IC = 500 mA; IB = 50 mA IC = 500 mA; VCE = 2 V IC = 50 mA; VCE = 5 V; f = 100 MHz IC = 150 mA; VCE = 2 V IC = 150 mA; VCE = 2 V; see Fig.2
- - 100 -
mV V MHz
1999 Apr 23
3
Philips Semiconductors
Product specification
NPN medium power transistors
BC635; BC637; BC639
handbook, full pagewidth
160
MBH729
hFE 120
VCE = 2 V
80
40
0 10-1
1
10
102
IC (mA)
103
Fig.2 DC current gain; typIcal values.
1999 Apr 23
4
Philips Semiconductors
Product specification
NPN medium power transistors
PACKAGE OUTLINE Plastic single-ended leaded (through hole) package; 3 leads
BC635; BC637; BC639
SOT54
c
E d A L b
1
D
2
e1 e
3
b1
L1
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5
Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28
1999 Apr 23
5
Philips Semiconductors
Product specification
NPN medium power transistors
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BC635; BC637; BC639
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Apr 23
6
Philips Semiconductors
Product specification
NPN medium power transistors
NOTES
BC635; BC637; BC639
1999 Apr 23
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA63
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 Apr 23
Document order number:
9397 750 05812

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